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10.1117/12.2248173ISTPChang WL, 2007, OPT LETT, V32, P71, DOI 10.1364/OL.32.000071; Chu CH, 2010, OPT EXPRESS, V18, P18383, DOI 10.1364/OE.18.018383; Dun AH, 2011, CHIN OPT LETT, V9, DOI 10.3788/COL201109.082101; Guo C., 2012, ADV MATER, V24, P3010; Guo C., 2012, ADV MATER, V24, P3076; Hosseini P, 2014, NATURE, V511, P206, DOI 10.1038/nature13487; Juodkazis S, 2011, OPT EXPRESS, V19, P5802, DOI 10.1364/OE.19.005802; Kalb JA, 2008, J MICROELECTROMECH S, V17, P1094, DOI 10.1109/JMEMS.2008.928708; Li H, 2012, APPL PHYS A-MATER, V107, P221, DOI 10.1007/s00339-011-6746-9; Liu CP, 2009, IEEE T MAGN, V45, P2206, DOI 10.1109/TMAG.2009.2016149; Liu J, 2009, J APPL PHYS, V106, DOI 10.1063/1.3247194; Lucas BD, 2008, ADV MATER, V20, P1129, DOI 10.1002/adma.200700225; Manca N, 2013, ADV MATER, V25, P6430, DOI 10.1002/adma.201302087; Matsunaga T, 2011, NAT MATER, V10, P129, DOI [10.1038/nmat2931, 10.1038/NMAT2931]; Orava J, 2007, J NON-CRYST SOLIDS, V353, P1441, DOI 10.1016/j.jnoncrysol.2006.10.069; Orava J, 2006, J NON-CRYST SOLIDS, V352, P1637, DOI 10.1016/j.jnoncrysol.2005.09.041; Shim Y, 2013, PROC IEEE MICR ELECT, P237, DOI 10.1109/MEMSYS.2013.6474221; Shportko KV, 2015, NANOSCALE RES LETT, V10, DOI 10.1186/s11671-015-0735-4; Usami Y, 2009, APPL PHYS EXPRESS, V2, DOI 10.1143/APEX.2.126502; Wang Q, 2016, NAT PHOTONICS, V10, P60, DOI [10.1038/nphoton.2015.247, 10.1038/NPHOTON.2015.247]; Wang R, 2014, OPT EXPRESS, V22, P4973, DOI 10.1364/OE.22.004973; Wang YS, 2012, NANOSCALE, V4, P1545, DOI 10.1039/c2nr11822j; Wang YS, 2011, OPT EXPRESS, V19, P17390, DOI 10.1364/OE.19.017390; Wei JS, 2014, OPT EXPRESS, V22, P32470, DOI 10.1364/OE.22.032470; Xu F, 2014, J APPL PHYS, V115, DOI 10.1063/1.486380725International Workshop on Information Data Storage / 10th International Symposium on Optical Storage58288489818Proc.SPIE2016micro-structures; laser thermal lithography; phase-change materialPHASE-CHANGE MATERIALS; LOCAL-STRUCTURE; FABRICATIONSESE98989998189818YFabrication of high-resolution micro-structures is essential for DOEs and MEMS and has attracted increasing attention. In this study, several high-resolution micro-structures have been fabricated on AgInSbTe phase-change films by laser thermal lithography, and the minimum linewidth of these structures is about 200 nm, which is smaller than the size of the focused spot. The results indicate that laser thermal lithography is a simple and effective technique for the fabrication of micro-structures on AgInSbTe phase-change thin films.2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical StorageHigh resolution patterning on AgInSbTe thin films by laser thermal lithography会议论文EnglishZhou, Qijun; Zhang, Kui; Wei, Tao; Wei, Jingsong4012098180Y WOS:000389277600035
外文题目: High resolution patterning on AgInSbTe thin films by laser thermal lithography
作者: Zhou, Qijun; Zhang, Kui; Wei, Tao; Wei, Jingsong
刊名: Proc.SPIE
来源图书: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
年: 2016 卷: 9818 文章编号:98180Y
会议名称: International Workshop on Information Data Storage / 10th International Symposium on Optical Storage
英文关键词:
micro-structures; laser thermal lithography; phase-change material
PHASE-CHANGE MATERIALS; LOCAL-STRUCTURE; FABRICATION
英文摘要:
文献类型: 会议论文
正文语种: English
收录类别: ISTP  
DOI: 10.1117/12.2248173
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