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10.1364/OE.25.013916SCI12-JunAkselrod GM, 2015, ADV MATER, V27, P8028, DOI 10.1002/adma.201503281; Aydin K, 2011, NAT COMMUN, V2, DOI 10.1038/ncomms1528; Chong YD, 2010, PHYS REV LETT, V105, DOI 10.1103/PhysRevLett.105.053901; Cong JW, 2016, OPT LETT, V41, P1965, DOI 10.1364/OL.41.001965; Conn A., MATH COMPUTATION AM, V66, P261; Glybovski SB, 2016, PHYS REP, V634, P1, DOI 10.1016/j.physrep.2016.04.004; Kraemer D, 2011, NAT MATER, V10, P532, DOI [10.1038/nmat3013, 10.1038/NMAT3013]; Landy NI, 2008, PHYS REV LETT, V100, DOI 10.1103/PhysRevLett.100.207402; Li LF, 1997, J OPT SOC AM A, V14, P2758, DOI 10.1364/JOSAA.14.002758; Li W, 2014, NANO LETT, V14, P3510, DOI 10.1021/nl501090w; Liu XL, 2011, PHYS REV LETT, V107, DOI 10.1103/PhysRevLett.107.045901; Lu C, 2010, LASER PHOTONICS REV, V4, P568, DOI 10.1002/lpor.200810061; MOHARAM MG, 1995, J OPT SOC AM A, V12, P1068, DOI 10.1364/JOSAA.12.001068; Nakayama K, 2008, APPL PHYS LETT, V93, DOI 10.1063/1.2988288; Popov E, 2008, OPT EXPRESS, V16, P6146, DOI 10.1364/OE.16.006146; Popov E, 2016, OPT EXPRESS, V24, P16410, DOI 10.1364/OE.24.016410; Rosenberg J, 2009, APPL PHYS LETT, V95, DOI 10.1063/1.3244204; Sturmberg BCP, 2016, OPTICA, V3, P556, DOI 10.1364/OPTICA.3.000556; Tian XM, 2016, PHOTONICS RES, V4, P146, DOI 10.1364/PRJ.4.000146; Tischler JR, 2006, OPT LETT, V31, P2045, DOI 10.1364/OL.31.002045; Wan WJ, 2011, SCIENCE, V331, P889, DOI 10.1126/science.1200735; Wang HC, 2015, PHOTONICS RES, V3, P329, DOI 10.1364/PRJ.3.000329; Watts CM, 2012, ADV MATER, V24, pOP98, DOI 10.1002/adma.201200674; Xiong QY, 2016, OPT LETT, V41, P1506, DOI 10.1364/OL.41.001506; Zhong YK, 2017, OPT EXPRESS, V25, pA124, DOI 10.1364/OE.25.00A124; Zhou WC, 2015, OPT EXPRESS, V23, pA413, DOI 10.1364/OE.23.00A413266097467251213922Opt. Express139162017TOTAL ABSORPTION; SEMICONDUCTOR GRATINGS; SURFACE-PLASMON; VISIBLE-LIGHT; FORMULATION; THINREORTSOM217325Achieving perfect absorption and controlling the absorption bandwidth are highly desirable for many applications. In this Work, we design a narrowband almost-perfect absorber by using a metal-insulator-metal thin-film stack with absorption up to 99.671% at 0.58 mu m incident Wavelength. The peak of absorption can be totally controlled by adjusting the thickness of the insulator layer. When the top metal layer is patterned by crossed grating nanostructure with optimized parameters, the absorber becomes broadband over 150nm bandwidth with average absorption exceeding 97% from 0.5 mu m to 0.65 mu m in the visible region. Both the narrowband and broadband absorbers are independent on polarization in specific incident angle range. This work opens up a promising new approach to control bandwidth of perfect absorption, which implicates many potential applications.Polarization-independent almost-perfect absorber controlled from narrowband to broadband期刊论文EnglishChen, Junming; Jin, Yunxia; Chen, Peng; Shan, Yao; Xu, Jiao; Kong, Fanyu; Shao, Jianda WOS:000403942300099
外文题目: Polarization-independent almost-perfect absorber controlled from narrowband to broadband
作者: Chen, Junming; Jin, Yunxia; Chen, Peng; Shan, Yao; Xu, Jiao; Kong, Fanyu; Shao, Jianda
刊名: Opt. Express
年: 2017 卷: 25 期: 12 页: 13916--13922
英文关键词:

TOTAL ABSORPTION; SEMICONDUCTOR GRATINGS; SURFACE-PLASMON; VISIBLE-LIGHT; FORMULATION; THIN
英文摘要:
文献类型: 期刊论文
正文语种: English
收录类别: SCI  12-Jun
DOI: 10.1364/OE.25.013916
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