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10.1117/12.2249274ISTPAFONSO CN, 1992, APPL PHYS LETT, V60, P3123, DOI 10.1063/1.106772; Her YC, 2003, J APPL PHYS, V93, P10097, DOI 10.1063/1.1575493; Huang H., 2010, J PHYS D, V43, P17540; Khulbe PK, 2002, APPL OPTICS, V41, P6220, DOI 10.1364/AO.41.006220; Liang GF, 2013, PHYSICA B, V424, P1, DOI 10.1016/j.physb.2013.04.059; Meinders E.R., 2006, OPTICAL DATA STORAGE; Morilla MC, 1997, JPN J APPL PHYS 2, V36, pL1015; Prokhorov E, 2011, J NON-CRYST SOLIDS, V357, P1610, DOI 10.1016/j.jnoncrysol.2009.05.072; Raoux S, 2010, CHEM REV, V110, P240, DOI 10.1021/cr900040x; Siegel J, 1999, APPL PHYS LETT, V75, P3102, DOI 10.1063/1.125244; STIFFLER SR, 1991, PHYS REV B, V43, P9851, DOI 10.1103/PhysRevB.43.9851; van Pieterson L, 2005, J APPL PHYS, V97, DOI 10.1063/1.1868860; Wang QF, 2004, JPN J APPL PHYS 1, V43, P5006, DOI 10.1143/JJAP.43.5006; Wang Q, 2015, J MATER SCI-MATER EL, V26, P4138, DOI 10.1007/s10854-015-2958-7; Wuttig M, 2007, NAT MATER, V6, P1004, DOI 10.1038/nmat2077; Yang QS, 2015, MATER SCI ENG B-ADV, V193, P189, DOI 10.1016/j.mseb.2014.12.017; Zhang K, 2012, PHYSICA B, V407, P2447, DOI 10.1016/j.physb.2012.03.044; Zhang T, 2007, APPL PHYS LETT, V91, DOI 10.1063/1.280563318International Workshop on Information Data Storage / 10th International Symposium on Optical Storage58284709818Proc.SPIE2016phase change memory material; femtosecond laser; phase transition dynamics; real-time reflectivity measurementsERASABLE OPTICAL STORAGE; CHANGE MEMORY; GESB FILMS; CRYSTALLIZATION; DYNAMICS; DRIVENSESE9898999818981815The Femtosecond laser pulse induced phase transition dynamics of Cr-doped Sb2Te1 films was studied by real-time reflectivity measurements with a pump-probe system. It was found that crystallization of the as-deposited CrxSb2Te1 phase-change thin films exhibits a multi-stage process lasting for about 40ns. The time required for the multi-stage process seems to be not related to the contents of Cr element. The durations of the crystallization and amorphization processes are approximately the same. Doping Cr into Sb2Te1 thin film can improve its photo-thermal stability without obvious change in the crystallization rate. Optical images and image intensity cross sections are used to visualize the transformed regions. This work may provide further insight into the phase-change mechanism of CrxSb2Te1 under extra-non-equilibrium conditions and aid to develop new ultrafast phase-change memory materials.2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical StorageFemtosecond laser pulse induced phase transition of Cr-doped Sb2Te1 films studied with a pump-probe system会议论文EnglishJiang, Minghui; Wang, Qing; Lei, Kai; Wang, Yang; Liu, Bo; Song, Zhitang40120981815 WOS:000389277600042
外文题目: Femtosecond laser pulse induced phase transition of Cr-doped Sb2Te1 films studied with a pump-probe system
作者: Jiang, Minghui; Wang, Qing; Lei, Kai; Wang, Yang; Liu, Bo; Song, Zhitang
刊名: Proc.SPIE
来源图书: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
年: 2016 卷: 9818 文章编号:981815
会议名称: International Workshop on Information Data Storage / 10th International Symposium on Optical Storage
英文关键词:
phase change memory material; femtosecond laser; phase transition dynamics; real-time reflectivity measurements
ERASABLE OPTICAL STORAGE; CHANGE MEMORY; GESB FILMS; CRYSTALLIZATION; DYNAMICS; DRIVEN
英文摘要:
文献类型: 会议论文
正文语种: English
收录类别: ISTP  
DOI: 10.1117/12.2249274
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